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參數(shù)資料
| 型號： | HE8051 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 37K |
| 代理商： | HE8051 |
HI-SINCERITY
MICROELECTRONICS CORP.
HE8051
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6115-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HSMC Product Specification
Description
The HE8051 is designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Features
High Total Power Dissipation (PT: 2W, TC=25
°
C)
High Collector Current (IC: 1.5A)
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 40 V
VCEO Collector to Emitter Voltage..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current........................................................................................................... 1.5 A
IB Base Current.............................................................................................................. 500mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
40
25
6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification of hFE2
Rank
Range
B
C
D
E
85-160
120-200
160-300
250-500
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