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參數(shù)資料
| 型號： | HE9012 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | HE9012 |
HI-SINCERITY
MICROELECTRONICS CORP.
HE9012
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 1/4
HE9012
HSMC Product Specification
Description
The HE9012 is designed for use in 1W output amplifier of portable radios in
class B push-pull operation.
Features
High total power dissipation (PT: 625mW)
High collector current (IC: 500mA)
Complementary to HE9013
Excellent linearity
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage ................................................................................................ -20 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current.................................................................................................................. -500 mA
IBP Base Current...................................................................................................................... -100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
Cob
fT
Min.
-40
-20
-5
-
-
-
-
-
112
40
-
100
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCE=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCB=-10V, f=1MHz
VCE=-1V, IC=-10mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
Classification on hFE1
Rank
Range
G
H
I1
I2
112-166
144-202
176-246
214-300
TO-92
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HE9013 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9014 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9015 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9018 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HER156 | HIGH EFFICIENT RECTIFIER DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HE9013 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9014 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9015 | 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9018 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HE-90-5531 | 制造商:Crydom 功能描述: |
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