
HI-SINCERITY
MICROELECTRONICS CORP.
HE8551S
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6119
Issued Date : 1992.11.25
Revised Date : 2001.07.19
Page No. : 1/4
HE8551S
HSMC Product Specification
Description
The HE8551S is designed for general purpose amplifier applications.
Features
High DC Current gain: 100-400 at IC=150mA
Complementary to HE8051S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage.................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
PF
Classification Of hFE
Rank
hFE1
hFE2
C
C1
D
D1
E
100-180
-
100-180
>
100
160-300
-
160-300
>
100
250-500
-