- 您現在的位置：買賣IC網 > PDF目錄381861 > HE8551 (HSMC CORP.) PNP EPITAXIAL PLANAR TRANSISTOR PDF資料下載
參數資料
| 型號： | HE8551 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HE8551 |
HI-SINCERITY
MICROELECTRONICS CORP.
HE8551
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HSMC Product Specification
Description
The HE8551 is designed for use in 2W output amplifier of portable radios
in class B push-pull operation.
Features
High Total Power Dissipation (PT: 2W, TC=25
°
C)
High Collector Current (IC: 1.5A)
Complementary to HE8051
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°
C
Junction Temperature ............................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................................... 1 W
Total Power Dissipation (Tc=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ...................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-2mA, IB=0
IE=-100uA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification on hFE2
Rank
Range
B
C
D
E
85-160
120-200
190-300
250-500
相關PDF資料 |
PDF描述 |
|---|---|
| HE9012 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9013 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9014 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HE9015 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9018 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HE8551_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8551L-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8551L-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8551L-X-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8551L-X-T9N-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。