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參數(shù)資料
| 型號： | HE8550S |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HE8550S |
HI-SINCERITY
MICROELECTRONICS CORP.
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 1/4
HE8550S
HSMC Product Specification
Description
The HE8550S is designed for general purpose amplifier applications.
Features
High DC Current gain: 100-500 at IC=150mA
Complementary to HE8050S
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hEF
Rank
hFE1
hFE2
C
C1
D
D1
E
100-180
-
100-180
>
100
160-300
-
160-300
>
100
250-500
-
TO-92
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HE8550 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE8551S | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE8551 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9012 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HE9013 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HE8550-TO-92 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL SILIC ON TRANSISTOR |
| HE8550-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8550-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8550-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| HE8550-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
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