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參數(shù)資料
| 型號： | HCT259 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole |
| 中文描述： | 8位可尋址鎖存器 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HCT259 |
2000 Mar 14
8
Philips Semiconductors
Product specification
8-bit addressable latch
74AHC259;
74AHCT259
DC CHARACTERISTICS
74AHC family
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
°
C)
UNIT
OTHER
V
CC
(V)
25
40 to +85
40 to +125
MIN.
TYP.
2.0
3.0
4.5
MAX. MIN. MAX. MIN. MAX.
1.5
2.1
3.85
0.5
0.5
0.9
0.9
1.65
1.65
1.9
2.9
4.4
2.48
V
IH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
1.5
2.1
3.85
1.9
2.9
4.4
2.58
1.5
2.1
3.85
1.9
2.9
4.4
2.40
0.5
0.9
1.65
V
V
V
V
V
V
V
V
V
V
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
50
μ
A
V
I
= V
IH
or V
IL
;
I
O
=
4.0 mA
V
I
= V
IH
or V
IL
;
I
O
=
8.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 50
μ
A
4.5
3.94
3.8
3.70
V
V
OL
LOW-level output
voltage
2.0
3.0
4.5
3.0
0
0
0
0.1
0.1
0.1
0.36
0.1
0.1
0.1
0.44
0.1
0.1
0.1
0.55
V
V
V
V
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
V
I
= V
CC
or GND
4.5
0.36
0.44
0.55
V
I
I
input leakage
current
3-state output
OFF-state current
quiescent supply
current
input capacitance
5.5
0.1
1.0
2.0
μ
A
I
OZ
V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
5.5
±
0.25
±
2.5
±
10.0
μ
A
I
CC
5.5
4.0
40
80
μ
A
C
I
3
10
10
10
pF
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