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參數(shù)資料
| 型號(hào)： | HCT259 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole |
| 中文描述： | 8位可尋址鎖存器 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HCT259 |
2000 Mar 14
3
Philips Semiconductors
Product specification
8-bit addressable latch
74AHC259;
74AHCT259
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
3.0 ns.
Notes
1.
C
PD
is used to determine the dynamic power dissipation (P
D
in
μ
W).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
The condition is V
I
= GND to V
CC
.
2.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC
AHCT
t
PHL
/t
PLH
propagation delay
D to Qn
An to Qn
LE to Qn
MR to Qn
input capacitance
output capacitance
power dissipation capacitance
C
L
= 15 pF; V
CC
= 5 V
4.1
5.3
4.3
3.9
3.0
4.0
13
4.1
5.5
4.3
3.9
3.0
4.0
17
ns
ns
ns
ns
pF
pF
pF
C
I
C
O
C
PD
V
I
= V
CC
or GND
C
L
= 50 pF; f = 1 MHz; notes 1 and 2
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