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參數(shù)資料
| 型號(hào)： | HCT259 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole |
| 中文描述： | 8位可尋址鎖存器 |
| 文件頁數(shù)： | 11/20頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HCT259 |
2000 Mar 14
11
Philips Semiconductors
Product specification
8-bit addressable latch
74AHC259;
74AHCT259
Notes
1.
2.
Typical values at V
CC
= 3.3 V.
Typical values at V
CC
= 5.0 V.
V
CC
= 4.5 to 5.5 V;
note 2
t
PHL
/t
PLH
propagation delay
D to Qn
propagation delay
An to Qn
propagation delay
LE to Qn
propagation delay
MR to Qn
propagation delay
D to Qn
propagation delay
An to Qn
propagation delay
LE to Qn
propagation delay
MR to Qn
LE pulse width
HIGH or LOW
MR pulse width
LOW
set-up time
D to LE, An to LE
hold time D to LE,
An to LE
see Figs 5 and 11 15 pF
4.1
7.5
1.0
9.0
1.0
10.0
ns
see Figs 6 and 11
5.3
9.5
1.0
11.5
1.0
12.5
ns
see Figs 7 and 11
4.3
8.0
1.0
9.5
1.0
10.5
ns
t
PHL
see Figs 8 and 11
3.9
7.0
1.0
8.5
1.0
9.5
ns
t
PHL
/t
PLH
see Figs 5 and 11 50 pF
5.3
9.5
1.0
11.0
1.0
12.0
ns
see Figs 6 and 11
6.5
11.5
1.0
13.5
1.0
15.0
ns
see Figs 7 and 11
5.5
10.0
1.0
11.5
1.0
12.5
ns
t
PHL
see Figs 8 and 11
5.1
9.0
1.0
10.5
1.0
11.5
ns
t
W
see Figs 7 and 11
5.0
5.0
5.0
ns
see Figs 8 and 11
5.0
5.0
5.0
ns
t
su
see Figs 9,
10 and 11
see Figs 9 and 11
4.0
4.0
4.0
ns
t
h
1.0
1.0
1.0
ns
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
°
C)
UNIT
WAVEFORMS
C
L
25
40 to +85
40 to +125
MIN.
TYP.
MAX.
MIN.
MAX.
MIN.
MAX.
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