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參數(shù)資料
| 型號(hào)： | HCT259 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole |
| 中文描述： | 8位可尋址鎖存器 |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HCT259 |
2000 Mar 14
15
Philips Semiconductors
Product specification
8-bit addressable latch
74AHC259;
74AHCT259
handbook, full pagewidth
open
GND
VCC
VCC
VI
VO
MNA219
D.U.T.
CL
RT
1000
PULSE
GENERATOR
S1
Fig.11 Load circuitry for switching times.
TEST
S1
t
PLH
/t
PHL
t
PLZ
/t
PZL
t
PHZ
/t
PZH
open
V
CC
GND
Definitions for test circuit.
C
L
= load capacitance including jig and probe capacitance (See Chapter “AC characteristics”).
R
T
= termination resistance should be equal to the output impedance Z
o
of the pulse generator.
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