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參數(shù)資料
| 型號： | HBD678 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | HBD678 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD678
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6625-A
Issued Date : 1994.10.04
Revised Date : 2000.10.01
Page No. : 1/2
HSMC Product Specification
Description
The HBD678 is designed for use as output devices in
complementary general purpose amplifier applications.
Features
High Current Gain
Monolithic Constructor
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 4 A
IB Base Current.................................................................................................................... 1 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
Min.
60
60
5
-
-
-
-
-
750
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
200
200
2
2.5
2.5
-
Unit
V
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA
IC=50mA
IE=1mA
VCB=30V
VCB=60V
VBE=5V
IC=1.5A, IB=30mA
IC=1.5A, VCE=3V
IC=1.5A, VCE=3V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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