參數(shù)資料
型號(hào)： HBF421
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 58K
代理商： HBF421
HI-SINCERITY
MICROELECTRONICS CORP.
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 1/4
HBF421
HSMC Product Specification
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................................... 830 mW
Maximum Voltages and Currents (Ta=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................ -300 V
V
CEO
Collector to Emitter Voltage ..................................................................................................................... -300 V
V
EBO
Emitter to Base Voltage............................................................................................................................... -5 V
I
C
I
BM
Peak Base Current ................................................................................................................................... -50 mA
I
CM
Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics
(Ta=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
-300
-
-
V
I
C
=-100uA, I
E
=0
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
-300
-
-
V
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-5V, I
E
=0
I
C
=-30mA, I
B
=-3mA
V
CE
=-20V, I
C
=-25mA
I
E
=-10mA, V
CE
=-10V, f=100MHz
-5
-
-
V
-
-
-100
nA
-
-
-100
nA
-
-
-0.6
V
50
-
-
60
-
-
MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-92
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