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參數(shù)資料
| 型號： | HBF422 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 32K |
| 代理商： | HBF422 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBF422
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 1/3
HBF422
HSMC Product Specification
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 830 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 250 V
VCEO Collector to Emitter Voltage.................................................................................... 250 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
250
250
5
-
-
-
50
60
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
100
10
0.6
-
-
Unit
V
V
V
nA
uA
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=25mA
IE=10mA, VCE=10V, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-92
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