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參數(shù)資料
| 型號(hào)： | HBF4522D |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN TRIPLE DIFFUSION PLANAR TRANSISTOR |
| 中文描述： | npn型三重?cái)U(kuò)散平面晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 32K |
| 代理商： | HBF4522D |
HI-SINCERITY
MICROELECTRONICS CORP.
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
HSMC Product Specification
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
Features
High Breakdown Voltage
Low C-E Saturation Voltage
High Cutoff Frequency
High Current Gain
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 20 mA
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
550
550
7
-
-
-
100
90
Typ.
-
-
-
-
-
0.35
150
-
Max.
-
-
-
1
100
0.5
200
-
Unit
V
V
V
uA
nA
V
Test Conditions
IC=1mA
IC=100uA
IE=10uA,
VCB=500V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=30mA
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-126ML
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