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參數(shù)資料
| 型號： | HBF423 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | HBF423 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBF423
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6403-B
Issued Date : 1993.03.18
Revised Date : 2000.09.20
Page No. : 1/3
HSMC Product Specification
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 830 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ..................................................................................... -250 V
VCEO Collector to Emitter Voltage.................................................................................. -250 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ....................................................................................................... -50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
-250
-250
-5
-
-
-
50
60
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-10
-0.6
-
-
Unit
V
V
V
nA
uA
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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