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參數(shù)資料
| 型號： | HBD675 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 32K |
| 代理商： | HBD675 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD675
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6619-C
Issued Date : 1994.07.22
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
Description
The HBD675 is designed for use as output devices in
complementary general purpose amplifier applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 45 V
BVCEO Collector to Emitter Voltage................................................................................... 45 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 4 A
IB Base Current ................................................................................................................ 0.1 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
Min.
45
45
5
-
-
-
-
-
750
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
500
200
2
2.5
2.5
-
Unit
V
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA
IC=50mA
IE=100uA
VCE=25V
VCB=45V
VBE=5V
IC=1.5A, IB=30mA
IC=1.5A, VCE=3V
IC=1.5A, VCE=3V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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