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參數資料
| 型號： | HBD438T |
| 廠商： | HSMC CORP. |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | HBD438T |
HI-SINCERITY
MICROELECTRONICS CORP.
HBD438T
COMPLEMENTARY SILICON POWER TRANSISTORS
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD438T
HSMC Product Specification
Description
The HBD438T is silison epitaxial-base PNP power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary NPN type is HBD437T.
Absolute Maximum Ratings
(Ta=25
°
C)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
Parametor
Value
-45
-45
-45
-5
-4
-7
-1
25
1.3
-55 to 150
150
Unit
V
V
V
V
A
A
A
W
W
°
C
°
C
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
Collector Peak Current (t
≤
10ms)
Base Current
Tc=25
°
C
Ta=25
°
C
PD
Total Dissipation at
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
6
96
°
C/W
°
C/W
Electrical Characteristics
(Ta=25
°
C, unless otherwise specified)
Symbol
ICBO
Parameter
Test Conditions
VCB=-45V
Min.
-
Typ.
-
Max.
-100
Unit
uA
Collector Cut-off Current (IE=0)
Collector Cut-off Current
(VBE=0)
Emitter Cut-off Current (IC=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
ICES
VCE=-45V
-
-
-100
uA
IEBO
VEB=-5V
-1
mA
*VCEO(sus)
IC=-100mA
-45
-
-
V
*VCE(sat)
IC=-2A, IB=-0.2A
-
-0.2
-0.6
V
IC=-10mA,VCE=-5V
IC=-2A, VCE=-1V
IC=-10mA, VCE=-5V
IC=-0.5A, VCE=-1V
IC=-2A, VCE=-1V
IC=-0.25A, VCE=-1V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
-0.58
-
130
140
-
-
-
V
V
*VBE
Base-Emitter Voltage
-1.2
-
-
-
-
30
85
40
3
*hFE
DC Current Gain
fT
Transition Frequency
MHz
TO-126
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| HBD678 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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