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參數(shù)資料
| 型號(hào)： | HB52RF1289E2 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 1 GB Registered SDRAM DIMM 128-Mword 】 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 】 4 Components) PC133 SDRAM |
| 中文描述： | 1 GB的注冊(cè)SDRAM的內(nèi)存128 Mword】72位，133 MHz內(nèi)存總線，2銀模塊（36個(gè)64 M】4組件）PC133 SDRAM的 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 161K |
| 代理商： | HB52RF1289E2 |
HB52RF1289E2-75B
Data Sheet E0018H10
10
DC Characteristics
(Ta = 0 to 55°C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)
HB52RF1289E2-75B
Parameter
Symbol
Min
Max
Unit
Test conditions
Notes
Operating current
I
CC1
I
CC2P
—
3215
mA
Burst length = 1
t
RC
= min
CKE = V
IL
, t
CK
= 12
ns
1, 2, 3
Standby current in power
down
—
803
mA
6
Standby current in power
down (input signal stable)
I
CC2PS
—
767
mA
CKE = V
IL
, t
CK
=
∞
7
Standby current in non
power down
I
CC2N
—
1415
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
Active standby current in
power down
I
CC3P
—
839
mA
1, 2, 6
Active standby current in
non power down
I
CC3N
—
1775
mA
1, 2, 4
Burst operating current
I
CC4
—
3575
mA
1, 2, 5
Refresh current
I
CC5
I
CC6
—
5195
mA
t
RC
= min
3
Self refresh current
—
803
mA
V
IH
≥
V
–
0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
8
Input leakage current
I
LI
I
LO
–
10
10
μA
Output leakage current
–
10
10
μA
Output high voltage
V
OH
V
OL
2.4
—
V
I
OH
=
–
4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
V
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| HB52RD648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RF1289E2-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:x72 SDRAM Module |
| HB52RF1289E2U-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC133 SDRAM |
| HB52RF328GB-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
| HB52RF328GB-75BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
| HB52RF328GB-B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM Micro DIMM |
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