參數(shù)資料
型號(hào): HB52R329E22
廠商: Hitachi,Ltd.
英文描述: 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述: 注冊(cè)使用256 MB SDRAM的內(nèi)存(256 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 6/67頁
文件大小: 630K
代理商: HB52R329E22
HB52R329E22-D
6
Serial PD Matrix*
1
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
module manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256 byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses bits
0
0
0
0
1
1
0
0
0C
12
4
Number of column addresses
bits
0
0
0
0
1
0
1
0
0A
10
5
Number of banks
0
0
0
0
0
0
1
0
02
2
6
Module data width
0
1
0
0
1
0
0
0
48
72 bit
7
Module data width (continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest
CE
latency)
10 ns
1
0
1
0
0
0
0
0
A0
CL = 3
10
SDRAM access from Clock
(highest
CE
latency)
6 ns
0
1
1
0
0
0
0
0
60
*
3
11
Module configuration type
0
0
0
0
0
0
1
0
02
ECC
12
Refresh rate/type
1
0
0
0
0
0
0
0
80
Normal
(15.625
μ
s)
Self refresh
13
SDRAM width
0
0
0
0
0
1
0
0
04
16M
×
4
×
4
14
Error checking SDRAM width
0
0
0
0
0
1
0
0
04
15
SDRAM device attributes:
minimum clock delay for back-to-
back random column addresses
0
0
0
0
0
0
0
1
01
1 CLK
16
SDRAM device attributes:
Burst lengths supported
1
0
0
0
1
1
1
1
8F
1, 2, 4, 8,
full page
17
SDRAM device attributes:
number of banks on SDRAM
device
0
0
0
0
0
1
0
0
04
4
18
SDRAM device attributes:
CE
latency
(-A6D)
0
0
0
0
0
1
1
0
06
2, 3
(-B6D)
0
0
0
0
0
1
0
0
04
3
19
SDRAM device attributes:
CS
latency
0
0
0
0
0
0
0
1
01
0
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參數(shù)描述
HB52R329E22-A6F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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