參數(shù)資料
型號: HB52R329E22
廠商: Hitachi,Ltd.
英文描述: 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述: 注冊使用256 MB SDRAM的內(nèi)存(256 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 48/67頁
文件大小: 630K
代理商: HB52R329E22
HB52R329E22-D
48
Read command to Precharge command interval (same bank):
When the precharge command is executed for the same bank as the read command that preceded it, the
minimum interval between the two commands is one clock. However, since the output buffer then
becomes High-Z after the clocks defined by l
HZP
, there is a case of interruption to burst read data output will
be interrupted, if the precharge command is input during burst read. To read all data by burst read, the
clocks defined by l
EP
must be assured as an interval from the final data output to precharge command
execution.
READ to PRECHARGE Command Interval (same bank): To output all data
CE
Latency = 3, Burst Length = 4
CK
Command
Dout
READ
PRE/PALL
out A0
out A1
out A2
out A3
CL=3
l = -2 cycle
CE
Latency = 4, Burst Length = 4
CK
Command
Dout
READ
PRE/PALL
out A0
out A1
out A2
out A3
CL=4
l = -3 cycle
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