參數(shù)資料
型號(hào): HB52R1289E22
廠商: Elpida Memory, Inc.
英文描述: 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
中文描述: 1 GB的注冊(cè)SDRAM的內(nèi)存1 GB的注冊(cè)SDRAM的內(nèi)存(36個(gè)64 M】4組件)PC100的SDRAM內(nèi)存
文件頁(yè)數(shù): 14/18頁(yè)
文件大小: 168K
代理商: HB52R1289E22
HB52R1289E22-A6B/B6B
Data Sheet E0017H20
14
Relationship Between Frequency and Minimum Latency
Parameter
HB52R1289E22
Frequency (MHz)
-A6B/B6B
t
CK
(ns)
Active command to column command (same bank)
Symbol
PC100
Symbol 10
Notes
I
RCD
I
RC
2
1
Active command to active command (same bank)
7
= [I
RAS
+ I
RP
]
1
Active command to precharge command (same bank)
I
RAS
I
RP
I
DPL
5
1
Precharge command to active command (same bank)
2
1
Write recovery or data-in to precharge command
(same bank)
Tdpl
2
1
Active command to active command (different bank)
I
RRD
I
SREX
I
APW
2
1
Self refresh exit time
Tsrx
2
2
Last data in to active command
(Auto precharge, same bank)
Tdal
4
= [I
DPL
+ I
RP
]
Self refresh exit to command input
I
SEC
7
= [I
RC
]
3
Precharge command to high impedance
(
CE
latency = 3)
(
CE
latency = 4)
I
HZP
I
HZP
I
APR
Troh
3
Troh
4
Last data out to active command (auto precharge)
(same bank)
0
Last data out to precharge (early precharge)
(
CE
latency = 3)
(
CE
latency = 4)
I
EP
2
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
I
BSR
3
Column command to column command
Tccd
1
Write command to data in latency
Tdwd
1
DQMB to data in
Tdqm
1
DQMB to data out
Tdqz
3
CKE to CK disable
Tcke
2
Register set to active command
S
to command disable
Tmrd
1
0
Power down exit to command input
1
Burst stop to output valid data hold
(
CE
latency = 3)
(
CE
latency = 4)
2
I
BSR
3
相關(guān)PDF資料
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