參數(shù)資料
型號(hào)： HB52R1289E22
廠商： Elpida Memory, Inc.
英文描述： 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
中文描述： 1 GB的注冊(cè)SDRAM的內(nèi)存1 GB的注冊(cè)SDRAM的內(nèi)存（36個(gè)64 M】4組件）PC100的SDRAM內(nèi)存
文件頁(yè)數(shù)： 11/18頁(yè)
文件大?。?/td> 168K
代理商： HB52R1289E22
HB52R1289E22-A6B/B6B
Data Sheet E0017H20
11
DC Characteristics
(Ta = 0 to 55°C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)
HB52R1289E22
-A6B
-B6B
Parameter
Symbol
Min
Max
Min
Max
Unit
Test conditions
Notes
Operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC1
I
CC1
I
CC2P
—
2945
—
—
mA
Burst length = 1
t
RC
= min
1, 2, 3
—
2945
—
2945
mA
Standby current in power
down
—
803
—
803
mA
CKE = V
IL
, t
CK
= 12
ns
6
Standby current in power
down (input signal stable)
I
CC2PS
—
767
—
767
mA
CKE = V
IL
, t
CK
=
∞
7
Standby current in non
power down
I
CC2N
—
1415
—
1415
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
Active standby current in
power down
I
CC3P
—
839
—
839
mA
1, 2, 6
Active standby current in
non power down
I
CC3N
—
1775
—
1775
mA
1, 2, 4
Burst operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC4
I
CC4
—
2945
—
—
mA
1, 2, 5
—
2945
—
2945
mA
Refresh current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC5
I
CC5
I
CC6
—
5195
—
—
mA
t
RC
= min
3
—
5195
—
5195
mA
Self refresh current
—
803
—
803
mA
V
IH
≥
V
–
0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
8
Input leakage current
I
LI
I
LO
–
10
10
–
10
10
μA
Output leakage current
–
10
10
–
10
10
μA
Output high voltage
V
OH
V
OL
2.4
—
2.4
—
V
I
OH
=
–
4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
—
0.4
V
相關(guān)PDF資料
PDF描述
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R1289E22-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E2-A6A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R1289E2-B6A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R1289E2U-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM
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