參數(shù)資料
型號: GS8170DW36C
廠商: GSI TECHNOLOGY
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 35.7ヒ1x1Dp的CMOS的I / O雙晚寫SigmaRAM
文件頁數(shù): 14/27頁
文件大?。?/td> 827K
代理商: GS8170DW36C
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.5
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+ 0.5 (
2.5 V max.)
V
V
IN
Voltage on Other Input Pins
–0.5 to V
DDQ
+ 0.5 (
2.5 V max.)
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
GS8170DW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.04 5/2005
14/27
2002, GSI Technology, Inc.
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
1.7
1.8
1.95
V
1.5 V I/O Supply Voltage
V
DDQ
1.4
1.5
V
DD
V
1.8 V I/O Supply Voltage
V
DDQ
1.7
1.8
V
DD
V
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
1
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
1
Note:
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted
are evaluated for worst case in the temperature range marked on the device.
CMOS I/O DC Input Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
CMOS Input High Voltage
V
IH
0.65 * V
DD
V
DD
+ 0.3
V
1
CMOS Input Low Voltage
V
IL
–0.3
0.35 * V
DD
V
1
Note:
For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
相關(guān)PDF資料
PDF描述
GS8170DW36C-200 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-200I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-250 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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