參數(shù)資料
型號(hào): GS816118
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過(guò)同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 10/32頁(yè)
文件大小: 584K
代理商: GS816118
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/32
1999, Giga Semiconductor, Inc.
Preliminary
GS816118/36T-225/200/180/166/150/133
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS8161E18BD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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參數(shù)描述
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