參數(shù)資料
型號(hào): GS8151E36
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit) Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲(chǔ)器(1,600位(為512k × 36位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 9/31頁(yè)
文件大?。?/td> 578K
代理商: GS8151E36
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/31
1999, Giga Semiconductor, Inc.
Preliminary
GS8151E18/36T-225/200/180/166/150/133
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS8151Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
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GS815236 16Mb(512K x 36Bit)S/DCD Sync Burst SRAM(16M位(512K x 36位)可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
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