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參數(shù)資料
| 型號： | GS8151E36 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 36Bit) Sync Burst SRAM(16M位（512K x 36位)同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 16Mb的（為512k × 36Bit）同步突發(fā)靜態(tài)存儲器（1,600位（為512k × 36位）同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁數(shù)： | 10/31頁 |
| 文件大?。?/td> | 578K |
| 代理商： | GS8151E36 |
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Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/31
1999, Giga Semiconductor, Inc.
Preliminary
GS8151E18/36T-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
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| GS8151Z18 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
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| GS815V018AB-250 | 制造商:GSI Technology 功能描述:GS815V018AB-250 - Trays |
| GS815V018AB-250I | 制造商:GSI Technology 功能描述:GS815V018AB-250I - Trays |
| GS815V018AB-300 | 制造商:GSI Technology 功能描述:GS815V018AB-300 - Trays |
| GS815V018AB-300I | 制造商:GSI Technology 功能描述:GS815V018AB-300I - Trays |
| GS815V018AB-333 | 制造商:GSI Technology 功能描述:GS815V018AB-333 - Trays |
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