參數(shù)資料
型號(hào)： GM72V66841ELT-8
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, TSOP2-54
文件頁(yè)數(shù)： 29/57頁(yè)
文件大?。?/td> 592K
代理商： GM72V66841ELT-8
LG Semicon
GM72V66841CT/CLT
CLK
Command
DQM,
DQMU
/DQML
CL=2
CL=3
READ to WRITE Command Interval (2)
Dout
Din
READ
2 Clock
WRIT
High-Z
High-Z
2. Same bank, different ROW address:
When the ROW address changes, consecutive
write commands cannot be executed; it is
necessary to separate the two write commands
with a Precharge command or a bank-active
command.
3. Different bank:
When the bank changes, the write can be
performed after an interval of no less than 1
cycle, provided that the other bank is in the bank-
active state. However, DQM, DQMU/DQML
must be set High so that the output buffer
becomes High-Z before data input.
28
相關(guān)PDF資料
PDF描述
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841ET 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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