參數(shù)資料
型號: GM72V66841ELT-75
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, TSOP2-54
文件頁數(shù): 49/57頁
文件大?。?/td> 592K
代理商: GM72V66841ELT-75
LG Semicon
Read / Single Write Cycle
GM72V66841CT/CLT
Bank0
Active
Bank0
Precharge
CS
RAS
CAS
WE
A12/A13
Address
a
CS
RAS
CAS
WE
A12/A13
Address
DQ(input)
Bank0
Write
Bank0
Write
Bank0
Write
Bank0
Precharge
Bank3
Active
Bank0
Read
R:b
C:a
R:a
C:a
C:a
Bank3
Active
Bank0
Active
Bank0
Read
Bank0
Read
Bank0
Write
Bank3
Precharge
R:b
C:a
C:a
R:a
C:b C:c
c
a
b
CLK
CKE
19
20
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
CKE
V
IH
V
IH
a+2 a+3
a
a+1
a+2 a+3
a
a+1
a+3
a
a+1
Read/Single Write Cycle
RAS-CAS Delay=3
CAS Latency=3
Burst Length=4
= VIH or VIL
48
DQ(input)
DQ(output)
DQ(output)
DQM ,
DQMU/DQML
DQM ,
DQMU/DQML
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GM72V66841ELT-8 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM