參數(shù)資料
型號(hào): GFP50N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 50A條(?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù): 1/4頁
文件大小: 88K
代理商: GFP50N03
T
RENCH
G
EN
F
ET
TO-220AB
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
50
A
Pulsed Drain Current
I
DM
100
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case
R
θ
JC
2.0
°C/W
Junction-to-Ambient (PCB Mounted)
R
θ
JA
40
°C/W
Note:
(1) Surface Mounted on FR4 Board, t
10 sec.
GFP50N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
13
m
I
D
50A
NewProduct
6/20/00
Features
Dynamic dv/dt Rating Repetitive Avalanche Rated
175°C Operating Temperature Ease of Paralleling
Fast Switching for High Efficiency
Simple Drive Requirements
Mechanical Data
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
*
May be notched or flat
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
Dimensions in inches and (millimeters)
G
D
S
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