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參數(shù)資料
| 型號： | GF4410 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 10A條（?。﹟蘇 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 150K |
| 代理商： | GF4410 |
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
20V
1.0
–
–
V
Gate-Body Leakage
I
GSS
–
–
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
–
–
1
μ
A
V
DS
=30V, V
GS
=0V, T
J
=55
°
C
–
–
25
On-State Drain Current
(1)
I
D(on)
V
DS
≥
5V, V
GS
= 10V
20
–
–
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 10A
–
8
13.5
m
V
GS
= 4.5V, I
D
= 5A
–
12
20
Forward Transconductance
(1)
g
fs
V
DS
= 15V, I
D
= 10A
–
38
–
S
Dynamic
Total Gate Charge
Q
g
V
DS
= 15V, I
D
= 10A, V
GS
= 5V
–
23
32
–
42
60
nC
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
–
5
–
Gate-Drain Charge
Q
gd
I
D
= 10A
–
8
–
Turn-On Delay Time
t
d(on)
–
9
15
Rise Time
t
r
V
DD
= 25V, R
L
= 25
I
D
≈
1A, V
GEN
= 10V
R
G
= 6
–
12
20
Turn-Off Delay Time
t
d(off)
–
70
100
ns
Fall Time
t
f
–
35
80
Input Capacitance
C
iss
V
GS
= 0V
–
2100
–
Output Capacitance
C
oss
V
DS
= 25V
–
320
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
190
–
Source-Drain Diode
Diode Forward Voltage
(1)
V
SD
I
S
= 2.3A, V
GS
= 0V
–
0.75
1.1
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3A, di/dt = 100A/
μ
s
–
55
80
ns
Note:
(1) Pulse test; pulse width
≤
300
μ
s,
duty cycle
≤
2%
GF4410
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GF4410\5B | 功能描述:MOSFET USE 781-ST4410DY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF4412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO |
| GF4412\5B | 功能描述:MOSFET ALT 781-SI4412ADY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF4420 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12.5A I(D) | SO |
| GF4420\5B | 功能描述:MOSFET USE 781-SI4420DY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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