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參數(shù)資料
| 型號： | GFB60N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第60A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | GFB60N03 |
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
60
A
Pulsed Drain Current
I
DM
100
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JC
2.0
°C/W
R
θ
JA
40
°C/W
Notes:
(1) Maximum DC current limited by the package
(2) 1-in
2
2oz. Cu PCB mounted
GFB60N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
11
m
I
D
60A
NewProduct
5/1/01
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.21 (5.33)
Min.
D
-T-
Seating Plate
0.027 (0.686)
0.037 (0.940)
0.096 (2.43)
0.102 (2.59)
G
D
S
PIN
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
G
D
S
TO-263AB
Mechanical Data
Case:
JEDEC TO-263 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250
°
C/10 seconds at terminals
Mounting Position:
Any
Weight:
1.3g
Dimensions in inches
and (millimeters)
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad
Layout
T
RENCH
G
EN
F
ET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GFB60N03\31B | 功能描述:MOSFET N-Channel 30V 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GFB70N03 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Enhancement-Mode MOSFET |
| GFB70N03\31B | 功能描述:MOSFET N-Channel 30V 70A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GFB75N03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| GFB75N03\31B | 功能描述:MOSFET N-Channel 30V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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