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參數(shù)資料
| 型號(hào)： | GFB65N02 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|第65A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 84K |
| 代理商： | GFB65N02 |
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150°C
Pulsed Drain Current
(1)
T
C
= 25°C
T
C
= 100°C
I
D
65
41
A
I
DM
150
Power Dissipation
T
J
= 150°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
(2)
57
23
3.1
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Junction-to-Case Thermal Resistance
R
θ
JC
2.2
°C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
40
°C/W
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2oz. Cu PCB (FR-4 material)
GFB65N02
N-Channel Enhancement-Mode MOSFET
V
DS
20V
R
DS(ON)
8.5
m
I
D
65A
New Product
10/1/01
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.21 (5.33)
Min.
D
-T-
Seating Plate
0.027 (0.686)
0.037 (0.940)
0.096 (2.43)
0.102 (2.59)
G
D
S
PIN
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
G
D
S
TO-263AB
Mechanical Data
Case:
JEDEC TO-263 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250
°
C/10 seconds at terminals
Mounting Position:
Any
Weight:
1.3g
Dimensions in inches
and (millimeters)
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad
Layout
T
RENCH
G
EN
F
ET
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