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參數(shù)資料
| 型號： | GB05XP120KTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 12 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 12 Amp |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 173K |
| 代理商： | GB05XP120KTPBF |
Document Number: 93912
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
7
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 5 A
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.660
0.536
1.483
τ
i (sec)
0.00037
0.001664
0.037405
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
1.684
1.683
0.833
τ
i (sec)
0.001077
0.020815
0.040397
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
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