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參數(shù)資料
| 型號： | GB05XP120KTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 12 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 12 Amp |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 173K |
| 代理商： | GB05XP120KTPBF |
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93912
Revision: 03-Aug-10
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 5 A
Fig. 3 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 4 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 5 - Typical Energy Loss vs. I
C
T
J
= 125 °C, L = 2 mH, V
= 600 V
R
g
= 10
; V
GE
= 15 V
Fig. 6 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
R
g
= 10
; V
GE
= 15 V
Fig. 7 - Typical Energy Loss vs. R
g
T
J
= 125 °C, L = 2 mH, V
CE
= 600 V
I
C
= 6 A; V
GE
= 15 V
Fig. 8 - Typical Switching Time vs. R
g
T
J
= 125 °C, L = 2 mH, V
= 600 V
I
C
= 6 A; V
GE
= 15 V
5
10
15
20
0
5
10
15
20
I
ce=3A
I
ce=6A
I
ce=12A
Vge (V)
V
5
10
15
20
0
5
10
15
20
I
ce=3A
I
ce=6A
I
ce=12A
Vge (V)
V
Ic (A)
E
3
6
9
12
0
500
1000
1500
2000
2500
E
TOT
E
ON
E
OFF
3
6
9
12
1
10
100
1000
Ic (A)
S
t
F
td
OFF
td
ON
t
R
Rg ( )
E
0
10
20
30
40
50
200
500
800
1100
1400
E
TOT
E
OFF
E
ON
0
10
20
30
40
50
10
100
1000
Rg ( )
S
t
F
td
OFF
td
ON
t
R
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