參數(shù)資料
型號(hào)： GB05XP120KTPBF
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： TRANSISTOR 12 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 1200 Volt 12 Amp
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 173K
代理商： GB05XP120KTPBF
Document Number: 93912
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 5 A
Notes
(1)
T
0
, T
1
are thermistor′s temperatures
R
0
R
1
(2)
Fig. 1 - Typical Output Characteristics
T
J
= 25 °C
Fig. 2 - Typical Output Characteristics
T
J
= 125 °C
THERMISTOR SPECIFICATIONS (T CODE ONLY)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
0
(1)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
-
30
-
k
Sensitivity index of the
thermistor material
(1)(2)
-
4000
-
K
------
1
T
0
-----
1
T
1
-----
–
exp
=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction
temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
2.68
°C/W
Diode
-
-
4.2
Case to sink per module
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Mounting torque
-
-
4
Nm
Weight
-
65
-
g
0
2
4
6
0
5
10
15
20
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
I
Vce (V)
0
2
4
6
8
10
0
5
10
15
20
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vce (V)
I
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