參數(shù)資料
型號(hào)： GB05XP120KTPBF
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： TRANSISTOR 12 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 1200 Volt 12 Amp
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 173K
代理商： GB05XP120KTPBF
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93912
Revision: 03-Aug-10
GB05XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 5 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
(BR)CES
V
(BR)CES
/
T
J
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 6 A
V
GE
= 15 V, I
C
= 12 A
V
GE
= 15 V, I
C
= 6 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 12 A, T
J
= 125 °C
I
C
= 250 μA
1200
-
-
V
Temperature coefficient of V
(BR)CES
-
1.14
-
V/°C
Collector to emitter voltage
V
CE(on)
-
2.90
3.17
V
-
4.04
4.46
-
3.45
3.60
-
5.07
5.32
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
V
GE(th)
4
-
6
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 10
-
mV/°C
g
fe
V
CE
= 25 V, I
C
= 6 A
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
I
F
= 6 A, V
GE
= 0 V
I
F
= 12 A, V
GE
= 0 V
I
F
= 6 A, V
GE
= 0 V, T
J
= 125 °C
I
F
= 12 A, V
GE
= 0 V, T
J
= 125 °C
V
GE
= ± 20 V
-
3.2
-
S
Collector to emitter leaking current
I
CES
-
-
250
μA
-
-
1000
Diode forward voltage drop
V
FM
-
2.33
2.77
V
-
3.01
3.63
-
2.55
2.98
-
3.45
4.07
Gate to emitter leakage current
I
GES
-
-
± 250
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
Q
ge
Q
gc
I
C
= 6 A
V
CC
= 600 V
V
GE
= 15 V
-
27
41
nC
Gate to emitter charge (turn-on)
-
3.7
5.6
Gate to collector charge (turn-on)
-
14
21
Turn-on switching loss
E
on
I
C
= 6 A, V
CC
= 600 V, V
GE
= 15 V
R
g
= 10
, L = 2.0 mH, T
J
= 25 °C
Energy losses include tail and
diode reverse recovery
I
C
= 6 A, V
CC
= 600 V, V
GE
= 15 V
R
g
= 10
, L = 2.0 mH, T
J
= 125 °C
Energy losses include tail and
diode reverse recovery
-
0.606
0.909
mJ
Turn-off switching loss
E
off
-
0.340
0.510
Total switching loss
E
tot
-
0.946
1.420
Turn-on switching loss
E
on
-
0.779
1.170
mJ
Turn-off switching loss
E
off
-
0.403
0.605
Total switching loss
E
tot
-
1.182
1.775
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
I
C
= 6 A, V
CC
= 600 V, V
GE
= 15 V
L = 2.0 mH, L
S
= 100 nH
R
g
= 10
, T
J
= 125 °C
-
47
71
ns
Rise time
-
17
26
Turn-off delay time
-
99
150
Fall time
-
362
543
Reverse BIAS safe operating area
RBSOA
T
J
= 150 °C, I
C
= 24 A
R
g
= 10
, V
GE
= 15 V to 0
V
CC
= 600 V, V
GE
= + 15 V to 0
T
J
= 150 °C, V
P
= 1200 V, R
g
= 10
Fullsquare
Short circuit safe operating area
SCSOA
10
-
-
μs
Input capacitance
C
ies
C
oes
C
res
E
rec
t
rr
I
rr
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
-
369
554
pF
Output capacitance
-
244
366
Reverse transfer capacitance
-
12
18
Diode reverse recovery energy
I
C
= 6 A, V
CC
= 600 V, V
GE
= 15 V
L = 2.0 mH, L
S
= 100 nH
R
g
= 10
, T
J
= 125 °C
-
334
-
μJ
Diode reverse recovery time
-
54
-
ns
Diode peak reverse current
-
17
-
A
相關(guān)PDF資料
PDF描述
GB100DA60UP TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
GB10RF120K TRANSISTOR 20 A, 1200 V, N-CHANNEL IGBT, ECONO2PIM-24, Insulated Gate BIP Transistor
GB10XF120K TRANSISTOR 20 A, 1200 V, N-CHANNEL IGBT, ECONO26PACK-17, Insulated Gate BIP Transistor
GB15RF120K TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, ECONO2PIM-24, Insulated Gate BIP Transistor
GB15XF120K TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, ECONO26PACK-17, Insulated Gate BIP Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GB0639372 制造商:Amphenol PCD 功能描述:GB 6 - Bulk
GB07SHT12-247 功能描述:肖特基二極管與整流器 1200V 7A SiC Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
GB0800028 制造商:Pericom Semiconductor Corporation 功能描述:8M XTAL DIP 11X4.5
GB082A 制造商:JHE 制造商全稱(chēng):Jewel Hill Electronic 功能描述:SPECIFICATIONS FOR LCD MODULE
GB082AHGAAMDA-V01 制造商:JHE 制造商全稱(chēng):Jewel Hill Electronic 功能描述:SPECIFICATIONS FOR LCD MODULE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*