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參數(shù)資料
| 型號： | GA100NA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 50 Amp |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 247K |
| 代理商： | GA100NA60UP |
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
SOT-227
Outline Dimensions
Vishay Semiconductors
DIMENSIONS
in millimeters (inches)
Notes
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
4
1
2
3
12.50 (0.492)
7.50 (0.295)
4.40 (0.173)
4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246)
25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
M
M
M
0.25 (0.010)
C A
B
4 x M4 nuts
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