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參數(shù)資料
| 型號(hào)： | GA100NA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 50 Amp |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | GA100NA60UP |
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 94543
Revision: 22-Jul-10
Fig. 6 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 8 - Typical Switching Losses vs.
Gate Resistance
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Fig. 10 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 11 - Turn-Off SOA
1
10
100
0
2000
4000
6000
8000
10000
12000
14000
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
ies
C
oes
C
res
0
100
Q , Total Gate Charge (nC)
200
300
400
500
0
4
8
12
16
20
V
G
V
I
= 400V
= 50A
CC
C
0
10
20
30
40
50
RG, Gate Resistance (Ω)
2
4
6
8
10
)
m
e
s
s
o
n
c
w
S
T
VCC= 480V
VGE = 15V
TJ= 25°C
I C = 60A
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
0.1
1
10
100
)
m
e
s
s
o
L
n
c
w
S
T
RG= 5.0Ω
VGE= 15V
VCC= 480V
IC= 120A
IC= 60A
IC= 30A
20
40
IC, Collector Current (A)
60
80
100
0
2
4
6
8
10
12
)
m
(
e
s
s
o
L
n
c
w
S
T
RG= 5.0Ω
TJ = 150°C
VGE= 15V
VCC= 480V
1
10
100
1000
1
10
100
1000
V = 20V
T = 125 C
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I
C
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