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參數(shù)資料
| 型號： | GA100NA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 50 Amp |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 247K |
| 代理商： | GA100NA60UP |
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
8
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 94543
Revision: 22-Jul-10
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc95036
Packaging information
www.vishay.com/doc95037
1
-
Device:
G = IGBT
2
-
Silicon technology:
A = Generation 4 IGBT, Generation 2 HEXFRED
3
4
5
6
7
8
-
-
-
-
-
Current rating (100 = 100 A)
N = High side chopper
SOT-227
Voltage rating (60 = 600 V)
U = Ultrafast with matching diode
-
None = Standard production
P = Lead (Pb)-free
Device code
5
1
3
2
4
6
7
8
G
A
100
N
A
60
U
P
1
2
3
4
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