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參數(shù)資料
| 型號(hào)： | GA100NA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 50 Amp |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | GA100NA60UP |
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 94543
Revision: 22-Jul-10
Fig. 16 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Fig. 17a - Test Circuit for Measurement of I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
,
I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 17b - Test Waveforms for Circuit of Fig. 17a,
Defining E
off
, t
d(off)
, t
f
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining E
on
, t
d(on)
, t
r
d
100
1000
10000
0
0
0
1
0
0
1
f
di /dt - (A/μs)
I = 100A
I = 50A
I = 25A
V = 200V
T = 125°C
T = 25°C
D.U.T.
430 μF
80 %
of V
CE
Same type
device
as
D.U.T.
t=5μs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
E = (E +E )
V
V
ge
∫
t2
V
CE
I
C
dt
t1
5 % V
CE
I
C
I
pk
V
CC
10 %
I
C
Vce
t1
t2
D.U.T. voltage
and current
Gate voltage D.U.T.
+ V
G
10 % + V
G
90 % I
C
tr
t
d
(on)
Eon =
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