參數(shù)資料
型號(hào)： GA100NA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 50 Amp
文件頁數(shù)： 2/10頁
文件大?。?/td> 247K
代理商： GA100NA60UP
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 94543
Revision: 22-Jul-10
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V
(BR)CES
Temperature coeffecient of
breakdown voltage
TEST CONDITIONS
MIN.
600
TYP.
-
MAX. UNITS
-
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1.0 mA
V
V
(BR)CES
T
J
-
0.36
-
V/°C
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 250 μA
See fig. 1, 4
-
1.49
2.1
V
-
1.80
-
-
1.47
-
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
V
GE(th)
3.0
-
6.0
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 250 μA
-
- 7.6
-
mV/°C
g
fe
V
CE
= 100 V, I
C
= 50 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 50 A
I
C
= 50 A, T
J
= 150 °C
V
GE
= ± 20 V
34
52
-
S
Zero gate voltage collector current
I
CES
-
-
250
μA
-
-
1.3
mA
Diode forward voltage drop
V
FM
See fig. 12
-
1.3
1.6
V
-
1.16
1.3
Gate to emitter leakage current
I
GES
-
-
± 100
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Q
g
Gate emitter charge (turn-on)
Q
ge
Gate collector charge (turn-on)
Q
gc
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off
)
Fall time
t
f
Turn-on switching loss
E
on
Turn-off switching loss
E
off
Total switching loss
E
ts
t
d(on)
E
tot
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total switching loss
E
ts
Internal emitter inductance
L
E
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
430
48
130
57
80
240
120
0.41
2.51
2.92
MAX. UNITS
640
72
190
-
-
-
-
-
-
4.4
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
See fig. 7
nC
T
J
= 25 °C
I
C
= 60 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 5.0
energy losses include “tail” and
diode reverse recovery
ns
mJ
Turn-on delay time
T
J
= 150 °C
I
C
= 60 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 5.0
energy losses include “tail” and
diode reverse recovery
-
57
-
ns
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
380
170
4.78
2.0
7400
730
90
90
120
7.3
11
360
780
370
220
-
-
-
-
-
-
-
-
mJ
nH
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
See fig. 6
pF
Diode reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 13
I
F
= 50 A
V
R
= 200 V
dI/dt = 200
A/μs
140
180
11
16
550
1200
-
-
ns
Diode peak reverse recovery current
I
rr
See fig. 14
A
Diode reverse recovery charge
Q
rr
See fig. 15
nC
Diode peak rate of fall recovery
during t
b
dI
(rec)M
/dt
See fig. 16
A/μs
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