參數(shù)資料
型號(hào)： FZ600R65KF1
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： IGBT-Module
中文描述： 1200 A, 6300 V, N-CHANNEL IGBT
封裝： MODULE-9
文件頁數(shù)： 2/10頁
文件大?。?/td> 185K
代理商： FZ600R65KF1
Technische Information / Technical Information
FZ 600 R 65 KF1
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 600A, V
CE
= 3600V
V
GE
= ±15V, R
Gon
= 4,3
, C
GE
=68nF, T
vj
= 25°C,
t
d,on
-
0,75
-
μs
V
GE
= ±15V, R
Gon
= 4,3
, C
GE
=68nF, T
vj
= 125°C,
-
0,72
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 600A, V
CE
= 3600V
V
GE
= ±15V, R
Gon
= 4,3
, C
GE
=68nF, T
vj
= 25°C,
t
r
-
0,37
-
μs
V
GE
= ±15V, R
Gon
= 4,3
, C
GE
=68nF, T
vj
= 125°C,
-
0,40
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 600A, V
CE
= 3600V
V
GE
= ±15V, R
Goff
= 25
, C
GE
=68nF, T
vj
= 25°C,
t
d,off
-
5,50
-
μs
V
GE
= ±15V, R
Goff
= 25
, C
GE
=68nF, T
vj
= 125°C,
-
6,00
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 600A, V
CE
= 3600V
V
GE
= ±15V, R
Goff
= 25
, C
GE
=68nF, T
vj
= 25°C,
t
f
-
0,40
-
μs
V
GE
= ±15V, R
Goff
= 25
, C
GE
=68nF, T
vj
= 125°C,
-
0,50
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 600A, V
CE
= 3600V, V
GE
= ±15V
R
Gon
= 4,3
, C
GE
=68nF, T
vj
= 125°C , L
σ
= 280nH
E
on
-
5900
-
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 600A, V
CE
= 3600V, V
GE
= ±15V
R
Goff
= 25
, C
GE
=68nF, T
vj
= 125°C , L
σ
= 280nH
E
off
-
3500
-
mJ
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V, acc to appl.note 2002/05
T
Vj
≤
125°C, V
CC
=4400V, V
CEmax
=V
CES
-L
σ
CE
·di/dt
I
SC
-
3000
-
A
Modulinduktivitt
stray inductance module
L
σ
CE
-
18
-
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
R
CC′+EE′
-
0,12
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 600A, V
GE
= 0V, T
vj
= 25°C
V
F
3,0
3,8
4,6
V
I
F
= 600A, V
GE
= 0V, T
vj
= 125°C
3,9
4,7
V
Rückstromspitze
peak reverse recovery current
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, V
GE
= -10V, T
vj
= 25°C
I
RM
-
800
-
A
V
R
= 3600V, V
GE
= -10V, T
vj
= 125°C
-
1000
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, V
GE
= -10V, T
vj
= 25°C
Q
r
-
550
-
μC
V
R
= 3600V, V
GE
= -10V, T
vj
= 125°C
-
1050
-
μC
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 600A, - di
F
/dt = 2000A/μs
V
R
= 3600V, V
GE
= -10V, T
vj
= 25°C
E
rec
-
660
-
mJ
V
R
= 3600V, V
GE
= -10V, T
vj
= 125°C
-
1600
-
mJ
2
FZ 600 R65 KF1 (final1).xls
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