參數(shù)資料
型號(hào): FGK60N6S2D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes
中文描述: 75 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC, STRETCH TO-247, 3 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 185K
代理商: FGK60N6S2D
2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1.0
2.0
0
10
20
40
60
80
0
3.0
2.5
0.5
4.0
R
G
= 3
, L = 100μH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
30
50
70
3.5
E
O
0.50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.25
0.75
0.0
2.00
1.75
1.00
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
10
20
40
60
80
0
30
50
70
1.50
1.25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
14
16
22
26
30
10
20
40
60
80
0
30
50
70
12
18
20
24
28
32
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
60
20
90
80
40
10
20
40
60
80
0
30
50
70
50
10
70
30
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
60
20
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
100
80
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
120
10
20
40
60
80
0
30
50
70
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
50
70
90
10
20
40
60
80
0
30
50
70
40
60
80
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
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