參數(shù)資料
型號: FGK60N6S2D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes
中文描述: 75 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC, STRETCH TO-247, 3 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 185K
代理商: FGK60N6S2D
2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
25
0
50
25
75
100
125
150
175
100
75
150
125
PACKAGE LIMITED
TJ = 150
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
100
150
50
200
75
125
25
175
225
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100μH
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
100
10
30
1000
T
J
= 125
o
C, R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
C
= 75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
100
V
GE
= 10V
50
50
500
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
11
12
16
16
12
1100
900
13
14
300
700
9
8
4
0
I
SC
t
SC
10
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
500
15
2
6
10
14
1000
800
600
400
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
0.4
0.6
1.2
0.2
0.8
1.0
1.6
1.8
1.4
2.0
2.2
0
10
30
70
50
80
40
20
60
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
0
0.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
30
0.6
1.2
70
50
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
80
T
J
= 25
o
C
0.2
T
J
= 150
o
C
T
J
= 125
o
C
0.8
1.0
40
20
60
1.6
1.8
1.4
2.0
2.2
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