參數(shù)資料
型號： FGH40N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 5/9頁
文件大?。?/td> 208K
代理商： FGH40N6S2D
2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
5
6
7
8
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
3
125
100
200
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
4
11
10
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 15
V
CE
= 200V
4
8
12
V
CE
= 600V
5
10
15
20
0
V
CE
= 400V
14
16
25
30
35
I
CE
= 10A
0
1.2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
1.6
125
25
150
2.4
E
T
,
2.0
I
CE
= 40A
I
CE
= 20A
0.8
0.4
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.0
1.0
3.0
2.5
FREQUENCY = 1MHz
C
OES
C
IES
60
80
100
0.5
1.5
2.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
2.0
2.8
2.4
8
10
11
12
16
3.2
V
C
,
I
CE
= 40A
PULSE DURATION = 250
μ
s
3.6
7
13
14
15
DUTY CYCLE < 0.5%
4.0
I
CE
= 10A
I
CE
= 20A
相關(guān)PDF資料
PDF描述
FGH40N6S2 600V, SMPS II Series N-Channel IGBT
FGP40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes
FGB40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGH50N3 300V, PT N-Channel IGBT
FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH40N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH40T100SMD 功能描述:IGBT 晶體管 1000V 40A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH40T120SMD 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube
FGH40T120SMD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 40A TRENCH TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 80A 555W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 40A FS2 Trench IGBT
FGH40T65SPD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 267W TO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 268W TO-247
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