參數(shù)資料
型號： FGH40N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/9頁
文件大小： 208K
代理商： FGH40N6S2D
2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250
μ
A, V
GE
= 0
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
40N6S2D
Device
Package
TO-247
Tape Width
N/A
Quantity
30
FGH40N6S2D
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
600
-
-
-
-
-
-
-
-
V
μ
A
mA
nA
V
CE
= 600V
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 20A,
V
GE
= 15V
I
EC
= 20A
T
J
= 25
°
C
T
J
= 125
°
C
-
-
-
1.9
1.7
2.2
2.7
2.0
2.6
V
V
V
V
EC
Diode Forward Voltage
I
C
= 20A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= V
GE
I
C
= 20A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
35
45
4.3
6.5
42
55
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, V
GE
= 15V, R
G
= 3
L = 100
μ
H, V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
100
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
10
35
55
115
200
195
14
18
68
85
115
380
375
30
39
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
260
-
-
85
105
-
450
600
35
48
IGBT and Diode at T
J
= 125
°
C
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
I
EC
= 20A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
-
-
-
-
0.43
1.25
°
C/W
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
相關(guān)PDF資料
PDF描述
FGH40N6S2 600V, SMPS II Series N-Channel IGBT
FGP40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes
FGB40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGH50N3 300V, PT N-Channel IGBT
FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH40N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
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