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參數(shù)資料
| 型號： | FGB40N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 176K |
| 代理商： | FGB40N6S2 |
2003 Fairchild Semiconductor Corporation
August 2003
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49438
Features
100kHz Operation at 390V, 24A
200kHZ Operation at 390V, 18A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 35nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
Low Conduction Loss
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
75
35
180
±20
±30
100A at 600V
260
290
2.33
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 30A, L = 1mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
mJ
W
W/°C
°C
°C
T
J
T
STG
Package
Symbol
C
E
G
TO-247
E
C
G
TO-263AB
TO-220AB
E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
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| FGB40N6S2T | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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