參數(shù)資料
型號(hào): FF300R17KE3
廠商: INFINEON TECHNOLOGIES AG
元件分類: IGBT 晶體管
英文描述: 62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode
中文描述: 404 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 243K
代理商: FF300R17KE3
2
Technische Information / technical information
FF300R17KE3
IGBT-Module
IGBT-modules
prepared by: Helmut Seidelmann
approved by: Wilhelm Rusche
date of publication: 2006-4-27
revision: 2.1
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V¢
1700
V
Dauergleichstrom
DC forward current
I
300
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I¢
600
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
14500
A2s
Charakteristische Werte / characteristic values
min.
typ.
1,80
1,90
max.
2,20
Durchlassspannung
forward voltage
I = 300 A, V = 0 V
I = 300 A, V = 0 V
V
V
V
TY = 25°C
TY = 125°C
Rückstromspitze
peak reverse recovery current
I = 300 A, - di/dt = 3600 A/μs (TY=125°C)
V = 900 V
V = -15 V
I¢
350
380
A
A
TY = 25°C
TY = 125°C
Sperrverzgerungsladung
recovered charge
I = 300 A, - di/dt = 3600 A/μs (TY=125°C)
V = 900 V
V = -15 V
Q
78,0
130
μC
μC
TY = 25°C
TY = 125°C
Abschaltenergie pro Puls
reverse recovery energy
I = 300 A, - di/dt = 3600 A/μs (TY=125°C)
V = 900 V
V = -15 V
Etê
40,0
72,0
mJ
mJ
TY = 25°C
TY = 125°C
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,13
K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
0,051
K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FF300R17KE3_S4 制造商:Infineon Technologies AG 功能描述:IGBT Module 300A 1700V
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FF300R17ME3 功能描述:IGBT 模塊 N-CH 1.7KV 375A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FF300R17ME4 功能描述:IGBT 模塊 IGBT 1700V 300A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: