參數(shù)資料
型號: FDZ293P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述: 4.6 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-9
文件頁數(shù): 6/7頁
文件大小: 376K
代理商: FDZ293P
6
www.fairchildsemi.com
FDZ293P Rev. C
F
fi
e
Dimensional Pad and Layout
1.50
±
0.10
0.038
±
0.025
TOP VIEW
0.85 MAX
C
C
L
PKG
GATE
INDEX SLOT
(HIDDEN)
SOLDER
BALL
STUD,
0.30
±
0.02
0.050 C
BALL
BALL,
0.30
±
0.02
0.050 A B
1.00
1.00
0.50
0.50
0.04
(0.28)
(0.60)
0.21
0.16
0.31
0.26
66
°
C
B
A
1
2
3
A B
C
C
C
0.10
SEATING
PLANE
FRONT VIEW
BOTTOM VIEW
SIDE VIEW
NOTES: UNLESS OTHERWISE SPECIFIED
A)
B)
ALL DIMENSIONS ARE IN MILLIMETERS.
NO JEDEC REGISTRATION REFERENCE AS
OF SEPTEMBER 2003.
BALL/STUD CONFIGURATION TABLE
TERMINAL ID
DESIGNATION TERMINAL TYPE
C1,C2,C3
DRAIN
A1
GATE
A2,A3,B1,B2,B3
SOURCE
C)
COPPER STUD
BALL
INDEX
SLOT
PKG
1.70
1.50
GATE
SOUCE
DRAIN
LAND PATTERN
RECOMMENDATION
BALL
0.25
1.00
1.00
0.50
0.50
1
2
3
A
B
C
C
C
C
C
A
A
1
B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ293P_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
FDZ294N 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ294P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ295P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ298N 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube