參數(shù)資料
型號(hào)： FDZ293P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： P-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述： 4.6 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-9
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 376K
代理商： FDZ293P
2
www.fairchildsemi.com
FDZ293P Rev. C
F
fi
e
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
–
20
V
V
GSS
Gate-Source Voltage
±
12
V
I
D
Drain Current
–
Continuous
(Note 1a)
–
4.6
A
–
Pulsed
–
10
P
D
Power Dissipation for Single Operation
(Note 1a)
1.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–
55 to +150
°
C
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
°
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
B
FDZ293P
7
”
8mm
3000 units
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain
–
Source Breakdown Voltage
V
GS
=
–
250
= 0V, I
D
A, Referenced to 25
=
–
250
μ
A
–
20
V
DSS
J
Breakdown Voltage Temperature
Coef
fi
cient
I
D
μ
°
C
–
13
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
=
–
16V, V
GS
= 0V
–
1
μ
A
I
GSS
On Characteristics (Note 2)
Gate
–
Body Leakage.
V
GS
=
±
12V, V
DS
= 0V
±
100
nA
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
=
–
250
= V
GS
, I
D
=
–
250
μ
A
–
0.6
–
0.8
–
1.5
V
J
Gate Threshold Voltage
Temperature Coef
fi
cient
I
D
μ
A, Referenced to 25
°
C
3
mV/
°
C
R
DS(on)
Static Drain
–
Source
On
–
Resistance
V
V
V
GS
GS
GS
V
GS
V
DS
=
–
4.5V, I
=
–
2.5V, I
=
–
4.5V, I
D
D
D
=
–
4.6A,
=
–
3.6A,
=
–
4.6A, T
J
= 125
°
C
36
58
47
46
72
65
m
I
D(on)
g
FS
Dynamic Characteristics
On
–
State Drain Current
=
–
4.5V, V
DS
=
–
5V
–
10
A
Forward Transconductance
=
–
5V, I
D
=
–
4.6A
13
S
C
iss
Input Capacitance
V
f = 1.0MHz
DS
=
–
10V, V
GS
= 0V,
754
pF
C
oss
Output Capacitance
167
pF
C
rss
Reverse Transfer Capacitance
92
pF
R
G
Gate Resistance
V
GS
= 15mV, f = 1.0MHz
6
Switching Characteristics (Note 2)
t
d(on)
Turn
–
On Delay Time
V
V
DD
GS
=
–
10V, I
=
–
4.5V, R
D
=
–
1A,
GEN
= 6
11
20
ns
t
r
Turn
–
On Rise Time
10
20
ns
t
d(off)
Turn
–
Off Delay Time
22
35
ns
t
f
Turn
–
Off Fall Time
17
31
ns
Q
g
Total Gate Charge
V
V
DS
GS
=
–
10V, I
=
–
4.5V
D
=
–
4.6A,
7.5
11
nC
Q
gs
Gate
–
Source Charge
1.5
nC
Q
gd
Gate
–
Drain Charge
2.0
nC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ293P_06 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
FDZ294N 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ294P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ295P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ298N 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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