- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375787 > FDZ293P (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 2.5 V Specified PowerTrench BGA MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDZ293P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| 中文描述： | 4.6 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 376K |
| 代理商： | FDZ293P |
2004 Fairchild Semiconductor Corporation
FDZ293P Rev. C
1
www.fairchildsemi.com
December 2004
F
FDZ293P
P-Channel 2.5 V Specified PowerTrench
BGA MOSFET
Features
I
–4.6 A, –20 V
Occupies only 2.25 mm
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when mounted
to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability.
R
R
DS(ON)
DS(ON)
= 46 m
= 72 m
of PCB area.
@ V
@ V
GS
GS
= –4.5 V
= –2.5 V
I
2
I
I
I
I
Applications
I
Battery management
Load switch
Battery protection
I
I
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench
process with state of the art BGA packaging, the FDZ293P min-
imizes both PCB space and R
embodies a breakthrough in packaging technology which
enables the device to combine excellent thermal transfer char-
acteristics, high current handling capability, ultra-low profile
packaging, low gate charge, and low R
DS(ON)
. This BGA MOSFET
DS(ON)
.
GATE
Bottom
Top
S
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDZ294N | N-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| FDZ298N | N-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| FDZ299P | LED, RT ANGLE, BLUE, SM |
| FDZ5047N | 30V N-Channel Logic Level PowerTrench BGA MOSFET |
| FDZ7064AS | 30V N-Channel PowerTrench SyncFET BGA MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ293P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET |
| FDZ294N | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ294P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ295P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ298N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。